DESCRIPTION. The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low. FEATURES. Metal sillicon junction majority carrier conduction. High current capability,low forward voltage drop. Extremely low reverse current IR. Ultra speed . Mechanical Data: Features: * Low Current Rectification and High Speed Switching. Applications: WEITRON http// 1N60/1N60P. DO-

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1N60 Datasheet(PDF) – Shunye Enterprise

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Germanium Diodes 1N60 – Cytron Technologies

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Germanium Diodes 1N60

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